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MBR3050CT - Schottky Barrier Diode

Datasheet Summary

Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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Datasheet preview – MBR3050CT

Datasheet Details

Part number MBR3050CT
Manufacturer SIRECTIFIER
File Size 97.11 KB
Description Schottky Barrier Diode
Datasheet download datasheet MBR3050CT Datasheet
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Full PDF Text Transcription

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MBR3050CT thru MBR3060CT High Tjm Low IRRM Schottky Barrier Diodes C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR3050CT 50 35 50 MBR3060CT 60 42 60 Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=100oC IFSM Peak Forward Surge Current 8.
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