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MJE200 Datasheet - Inchange Semiconductor

MJE200 Silicon NPN Power Transistor

*Collector *Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) *DC Current Gain- : hFE = 70(Min) @ IC= 500mA *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA *High Current-Gain *Bandwidth Product fT= 65MHz(Min) @ IC= 100mA *Minimum Lot-to.

MJE200_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJE200

Manufacturer:

Inchange Semiconductor

File Size:

213.52 KB

Description:

Silicon npn power transistor.

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MJE200 MJE200 Silicon NPN Power Transistor Inchange Semiconductor