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MJE200 - Silicon NPN Power Transistor

The MJE200 by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.

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Official preview page of the MJE200 Silicon NPN Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number MJE200
Manufacturer Inchange Semiconductor
File Size 213.52 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJE200_InchangeSemiconductor.pdf
Additional preview pages of the MJE200 datasheet.

MJE200 Product details

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) DC Current Gain- : hFE = 70(Min) @ IC= 500mA Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA High Current-Gain Bandwidth Product fT= 65MHz(Min) @ IC= 100mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage,low-power,high-gain audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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