MJE200 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min). DC Current Gain- : hFE = 70(Min) @ IC= 500mA. Low Collector-Emitter.

📥 Download Datasheet

MJE200 Datasheet Preview — Preview of MJE200 PDF

Datasheet Specifications

Part number: MJE200
Manufacturer: Inchange Semiconductor
File Size: 213.52 KB
Datasheet: MJE200_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low voltage,low-power,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Ti Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current

MJE200 Distributors

📁 Related Datasheet

MJE200G MJE205 MJE205K MJE210 MJE210G MJE220

📌 All Tags

MJE200 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor MJE200-like datasheet