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MJE200 Silicon NPN Power Transistor

MJE200 Description

isc Silicon NPN Power Transistor .
Collector. Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min). DC Current Gain- : hFE = 70(Min) @ IC= 500mA. Low Collector-Emitter.

MJE200 Applications

* Designed for low voltage,low-power,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Ti Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current

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Datasheet Details

Part number
MJE200
Manufacturer
Inchange Semiconductor
File Size
213.52 KB
Datasheet
MJE200_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor MJE200-like datasheet