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MJE200

Silicon NPN Power Transistor

MJE200 General Description


*Collector

*Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min)
*DC Current Gain- : hFE = 70(Min) @ IC= 500mA
*Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA
*High Current-Gain

*Bandwidth Product fT= 65MHz(Min) @ IC= 100mA
*Minimum Lot-to.

MJE200 Datasheet (213.52 KB)

Preview of MJE200 PDF

Datasheet Details

Part number:

MJE200

Manufacturer:

Inchange Semiconductor

File Size:

213.52 KB

Description:

Silicon npn power transistor.

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