Datasheet4U Logo Datasheet4U.com

2SA1217 - POWER TRANSISTOR

2SA1217 Description

isc Silicon PNP Power Transistor 2SA1217 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min). Good Linearity of hFE. Complement to Type 2SC2877. Minimum Lot-to-Lot vari.

2SA1217 Applications

* Designed for audio frequency power amplifier and low speed switching applications.
* Suitable for output stage of 5 watts car radio and car stereo. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V

📥 Download Datasheet

Preview of 2SA1217 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1210 - Epitaxial Planar Silicon Transistor (Sanyo)
  • 2SA1213 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA1213-G - General Purpose Transistor (Comchip)
  • 2SA1213-O - PNP Transistors (MCC)
  • 2SA1213-Y - PNP Transistor (MCC)
  • 2SA1213Y - PNP Transistor (Diodes)
  • 2SA1215 - Silicon PNP Transistor (Sanken electric)
  • 2SA1216 - Silicon PNP Epitaxial Planar Transistor (Sanken electric)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1217-like datasheet