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2SA1303 - POWER TRANSISTOR

2SA1303 Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. Complement to Type 2SC3284. Minimum Lot-to-Lot.

2SA1303 Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-C

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POWER TRANSISTOR Inchange Semiconductor
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