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2SA957 POWER TRANSISTOR

2SA957 Description

isc Silicon PNP Power Transistor 2SA957 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfor.

2SA957 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC

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Datasheet Details

Part number
2SA957
Manufacturer
Inchange Semiconductor
File Size
199.68 KB
Datasheet
2SA957_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA957-like datasheet