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2SC3565 Power Transistor

2SC3565 Description

isc Silicon NPN Power Transistor 2SC3565 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Low Saturation Voltage. Minimum Lot-to-Lot va.

2SC3565 Applications

* Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Co

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