BD245D - Silicon NPN Power Transistor
*Excellent Safe Operating Area *DC Current Gain- : hFE>40@IC = 1A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A *Designed for Complementary Use with the BD246D *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
