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BDX62B, BDX62 - Silicon PNP Darlington Power Transistor

BDX62B Description

isc Silicon PNP Darlington Power Transistor .
Collector Current -IC= -8A. High DC Current Gain-hFE= 1000(Min)@ IC= -3A. Complement to Type BDX63/A/B/C. Minimum Lot-to-Lot variatio.

BDX62B Applications

* Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A -100 V BDX62B -120 BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A -80 V

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BDX62B, BDX62. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BDX62B, BDX62
Manufacturer
Inchange Semiconductor
File Size
210.92 KB
Datasheet
BDX62_InchangeSemiconductor.pdf
Description
Silicon PNP Darlington Power Transistor
Note
This datasheet PDF includes multiple part numbers: BDX62B, BDX62.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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  • BDX63A - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR (Seme LAB)
  • BDX63B - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR (Seme LAB)
  • BDX63C - NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR (Seme LAB)
  • BDX64B - Bipolar PNP Device (Seme LAB)

📌 All Tags

Silicon PNP Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor BDX62B-like datasheet