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BDY25B - Silicon NPN Power Transistor

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Datasheet Details

Part number BDY25B
Manufacturer Inchange Semiconductor
File Size 207.22 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY25B-InchangeSemiconductor.pdf

BDY25B Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe amplifier applications.

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