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BUV20 Silicon NPN Power Transistor

BUV20 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High DC Current Gain- : hFE= 20(Min. High Switching Speed.

BUV20 Applications

* Designed for high speed, high current, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Contin

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Datasheet Details

Part number
BUV20
Manufacturer
Inchange Semiconductor
File Size
207.82 KB
Datasheet
BUV20-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Inchange Semiconductor BUV20-like datasheet