FQA11N90 - N-Channel MOSFET Transistor

Inchange Semiconductor

FQA11N90 Datasheet Preview — Preview of FQA11N90 PDF

Datasheet Details

Part number	FQA11N90
Manufacturer	Inchange Semiconductor
File Size	286.60 KB
Description	N-Channel MOSFET Transistor
Datasheet	FQA11N90-InchangeSemiconductor.pdf

FQA11N90 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11.4 A IDM Drain Current-Single Pluse 45.6 A PD Total Dissipation @TC=25℃ 300 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, J

Features

Drain Current : ID= 11.4A@ TC=25℃.
Drain Source Voltage : VDSS= 900V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.96Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 24, 2022 |