IRFB4310 N-Channel MOSFET Transistor

Inchange Semiconductor

IRFB4310 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310， IIRFB4310 *.

IRFB4310 Features

* Static drain-source on-resistance: RDS(on) ≤7.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4310 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 550 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage

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IRFB4310 Datasheet Preview — Preview of IRFB4310 PDF

Datasheet Details

Part number: IRFB4310
Manufacturer: Inchange Semiconductor
File Size: 245.87 KB
Datasheet: IRFB4310-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor Inchange Semiconductor

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