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KSD5010 Silicon NPN Power Transistor

KSD5010 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5010 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLICATIONS. Designe.

KSD5010 Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 2.5 A ICP Collector Current

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Datasheet Details

Part number
KSD5010
Manufacturer
Inchange Semiconductor
File Size
131.63 KB
Datasheet
KSD5010-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor KSD5010-like datasheet