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MJ11013 POWER TRANSISTOR

MJ11013 Description

isc Silicon PNP Darlington Power Transistor MJ11013 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation V.

MJ11013 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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