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TIP131 - Silicon NPN Darlington Power Transistor

TIP131 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

TIP131 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A I

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Datasheet Details

Part number
TIP131
Manufacturer
Inchange Semiconductor
File Size
212.76 KB
Datasheet
TIP131_InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor TIP131-like datasheet