BAR80 Datasheet - Infineon Technologies AG

BAR80 Silicon RF Switching Diode

BAR80 Silicon RF Switching Diode Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 125 -55 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80 Electrical Characteristics at TA = 25°C, unl.

BAR80_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

BAR80

Manufacturer:

Infineon ↗ Technologies AG

File Size:

42.16 KB

Description:

Silicon rf switching diode.

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BAR80 BAR80 Silicon Switching Diode Infineon Technologies AG

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