BAR80 Datasheet (Infineon Technologies AG) - Silicon RF Switching Diode

BAR80, Silicon RF Switching Diode

BAR80 Silicon RF Switching Diode Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 125 -55 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80 Electrical Characteristics at TA = 25°C, unl