BAR81 Datasheet - Siemens Semiconductor Group

BAR81 Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

BAR 81 Silicon RF Switching Diode Preliminary data Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 + 125 - 55 + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1.

BAR81 Datasheet (46.08 KB)

BAR81 Datasheet Preview — Preview of BAR81 PDF

Datasheet Details

Part number:

BAR81

Manufacturer:

Siemens Semiconductor Group

File Size:

46.08 KB

Description:

Preliminary data silicon rf switching diode (design for use in shunt configuration high shunt signal isolation low shunt insertion loss).

📁 Related Datasheet

BAR80 Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR80 Silicon RF Switching Diode (Infineon Technologies AG)

BAR81 Silicon RF Switching Diodes (Infineon Technologies AG)

BAR81W Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81W Silicon RF Switching Diode (Infineon Technologies AG)

BAR88 Silicon PIN Diode (Infineon Technologies AG)

BAR88-02L Silicon PIN Diode (Infineon Technologies AG)

BAR88-02V Silicon PIN Diode (Infineon Technologies AG)

BAR81 Distributor