BAR88-02L Datasheet, Diode, Infineon Technologies AG

PDF File Details

Part number:

BAR88-02L

Manufacturer:

Infineon ↗ Technologies AG

File Size:

476.23kb

Download:

📄 Datasheet

Description:

Silicon pin diode.

BAR88-02L Application

• Applications
• Very low forward resistance (typ. 1.5 Ω @ IF = 1 mA)
• Low capacitance at zero volt reverse bias at frequencies above

TAGS

BAR88-02L

Infineon Technologies AG

📁 Related Datasheet

BAR88-02V - Silicon PIN Diode (Infineon Technologies AG)
BAR88 Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 m.

BAR88-07L4 - Silicon PIN Diode (Infineon Technologies AG)
BAR88 Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 m.

BAR88-099L4 - Silicon PIN Diode (Infineon Technologies AG)
BAR88 Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 m.

BAR88 - Silicon PIN Diode (Infineon Technologies AG)
BAR88 Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 m.

BAR80 - Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)
BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Ma.

BAR80 - Silicon RF Switching Diode (Infineon Technologies AG)
BAR80 Silicon RF Switching Diode
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss 3 4 2 1 VSO05553 T.

BAR81 - Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)
BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss T.

BAR81 - Silicon RF Switching Diodes (Infineon Technologies AG)
BAR81 Silicon RF Switching Diodes
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss 3 4 2 1 VSO05553 .

BAR81W - Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)
BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss .

BAR81W - Silicon RF Switching Diode (Infineon Technologies AG)
BAR81 Silicon RF Switching Diode
Designed for use in shunt configuration in high performance RF switches
High shunt signal isolation
Low shu.