BAR80 Datasheet (Siemens Semiconductor Group) - Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

BAR80, Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55+125 -55+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semicon