BAR80 Datasheet - Siemens Semiconductor Group

BAR80 Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55+125 -55+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semicon.

BAR80_SiemensSemiconductorGroup.pdf

BAR80 Datasheet Preview — Preview of BAR80 PDF

Datasheet Details

Part number:

BAR80

Manufacturer:

Siemens Semiconductor Group

File Size:

68.05 KB

Description:

Silicon rf switching diode (design for use in shunt configuration hight shunt signal isolation low shunt insertion loss).

BAR80 Distributor

📁 Related Datasheet

BAR80 Silicon RF Switching Diode (Infineon Technologies AG)

BAR81 Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81 Silicon RF Switching Diodes (Infineon Technologies AG)

BAR81W Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81W Silicon RF Switching Diode (Infineon Technologies AG)

BAR88 Silicon PIN Diode (Infineon Technologies AG)

BAR88-02L Silicon PIN Diode (Infineon Technologies AG)

BAR88-02V Silicon PIN Diode (Infineon Technologies AG)

TAGS

BAR80 BAR80 Silicon Switching Diode Design for use shunt configuration Hight shunt signal isolation Low shunt insertion loss Siemens Semiconductor Group