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BAR81W Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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BAR 81W Silicon RF Switching Diode Preliminary data * Design for use in shunt configuration * High shunt signal isolation * Lo.

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Datasheet Specifications

Part number
BAR81W
Manufacturer
Siemens Semiconductor Group
File Size
30.65 KB
Datasheet
BAR81W_SiemensSemiconductorGroup.pdf
Description
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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