
BAR80 (Siemens Semiconductor Group)
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
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Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
3.3V/ Hot Insertion/ 8-Bit/ 2-Port NanoSwitch
2.5V/3.3V/ High Bandwidth/ Hot Insertion/ 8-Bit/ 2-Port Bus Switch
2.5V/3.3V/ High Bandwidth/ Hot Insertion 8-Bit/ 2-Port/ Bus Switch
2.5V/3.3V/ High Bandwidth/ Hot Insertion 8-Bit/ 2-Port/ Bus Switch
2.5V/3.3V/ High Bandwidth/ Hot Insertion 8-Bit/ 2-Port/ Bus Switch
2.5V/3.3V/ High Bandwidth/ Hot Insertion 16-Bit/ 2-Port/ Bus Switch
2.5V/3.3V/ High Bandwidth/ Hot Insertion/ 2-Bit/ 2-Port Bus Switch w/ Individual Enables
16-bit controlled enable rate 1-of-2 multiplexer/demultiplexer with precharged outputs and Schottky undershoot protection for live insertion
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
32 x 16 Nonblocking Video Crosspoint Switch with On-Screen Display Insertion and I/O Buffers
Designed for application where high density insertion of components is required
5 Gbps rail-to-rail low insertion loss switch
3.3V Hot Insertion 8-Bit 2-Port NanoSwitch
3.3V/ Hot Insertion 20-Bit/ 2-Port BusSwitch
3.3V/ Hot Insertion 20-Bit/ 2-Port BusSwitch
3.3V/ Hot Insertion/ 16-Bit/ 2-Port BusSwitch
3.3V/ Hot Insertion/ 16-Bit/ 2-Port BusSwitch
insertion Distributor