BAR81 Datasheet (Infineon Technologies AG) - Silicon RF Switching Diodes

BAR81, Silicon RF Switching Diodes

BAR81 Silicon RF Switching Diodes Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR81 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking BBs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 30 100 150 -55 125 -55 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-21-2001 BAR81 Electrical Characteristics at TA = 25°C, un