BAR81 Datasheet - Infineon Technologies AG

BAR81 Silicon RF Switching Diodes

BAR81 Silicon RF Switching Diodes Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR81 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking BBs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 30 100 150 -55 125 -55 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-21-2001 BAR81 Electrical Characteristics at TA = 25°C, un.

BAR81_InfineonTechnologiesAG.pdf

BAR81 Datasheet Preview — Preview of BAR81 PDF

Datasheet Details

Part number:

BAR81

Manufacturer:

Infineon ↗ Technologies AG

File Size:

23.29 KB

Description:

Silicon rf switching diodes.

📁 Related Datasheet

BAR80 Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR80 Silicon RF Switching Diode (Infineon Technologies AG)

BAR81 Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81W Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81W Silicon RF Switching Diode (Infineon Technologies AG)

BAR88 Silicon PIN Diode (Infineon Technologies AG)

BAR88-02L Silicon PIN Diode (Infineon Technologies AG)

BAR88-02V Silicon PIN Diode (Infineon Technologies AG)

TAGS

BAR81 BAR81 Silicon Switching Diodes Infineon Technologies AG

BAR81 Distributor