BAR81W - Silicon RF Switching Diode
BAR81 Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) Marking 0.15 BBs series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissip
