BAR81W Datasheet - Infineon Technologies AG

BAR81W Silicon RF Switching Diode

BAR81 Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) Marking 0.15 BBs series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissip.

BAR81W_InfineonTechnologiesAG.pdf

BAR81W Datasheet Preview — Preview of BAR81W PDF

Datasheet Details

Part number:

BAR81W

Manufacturer:

Infineon ↗ Technologies AG

File Size:

407.48 KB

Description:

Silicon rf switching diode.

📁 Related Datasheet

BAR81 Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR81 Silicon RF Switching Diodes (Infineon Technologies AG)

BAR81W Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR80 Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) (Siemens Semiconductor Group)

BAR80 Silicon RF Switching Diode (Infineon Technologies AG)

BAR88 Silicon PIN Diode (Infineon Technologies AG)

BAR88-02L Silicon PIN Diode (Infineon Technologies AG)

BAR88-02V Silicon PIN Diode (Infineon Technologies AG)

TAGS

BAR81W BAR81W Silicon Switching Diode Infineon Technologies AG

BAR81W Distributor