BF1009S - Silicon N-Channel MOSFET Tetrode
BF1009S Silicon N_Channel MOSFET Tetrode For low noise, high gain controlled input stage up to 1 GHz Operating voltage 9 V Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009S BF1009SR Maximum Ratings Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 150 150 Marking JLs
