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BF999 Datasheet - Infineon Technologies AG

BF999 Silicon N-Channel MOSFET Triode

BF999 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS  76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering po.

BF999 Datasheet (133.97 KB)

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Datasheet Details

Part number:

BF999

Manufacturer:

Infineon ↗ Technologies AG

File Size:

133.97 KB

Description:

Silicon n-channel mosfet triode.

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BF999 Silicon N-Channel MOSFET Triode Infineon Technologies AG

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