IPB06N03LAG Power-Transistor Datasheet - Infineon Technologies

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IPB06N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle.

IPB06N03LB - Power-Transistor (Infineon Technologies)
.. IPB06N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for .

IPB065N03L - Power-Transistor (Infineon)
Je]R %&$ #b % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@B.

IPB065N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.

IPB065N03LG - Power-Transistor (Infineon Technologies)
Je]R %&$ #b % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@B.

IPB065N06LG - Power-Transistor (Infineon Technologies)
.. IPB065N06L G IPP065N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channe.

IPB065N10N3 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB065N10N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB065N10N3 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Man.

IPB065N10N3G - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Man.

IPB065N15N3G - Power Transistor (Infineon)
IPB065N15N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( & Q. 5BI B5C9.

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