Datasheet Details
- Part number
- IPB065N10N3G
- Manufacturer
- Infineon ↗
- File Size
- 1.12 MB
- Datasheet
- IPB065N10N3G-Infineon.pdf
- Description
- MOSFET
IPB065N10N3G Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev.2.0 Final Power Man.
Features.
N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
IPB065N10N3G Features
* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
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