IPB065N10N3G MOSFET

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Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev.2.0 Final Power Man.
Features. N-channel, normal level. Excellent gate charge x RDS(on) product (FOM). Very low on-resistance RDS(on).

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Datasheet Specifications

Part number: IPB065N10N3G
Manufacturer: Infineon ↗
File Size: 1.12 MB
Datasheet: IPB065N10N3G-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

IPB065N10N3G Distributors

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IPB065N10N3G MOSFET Infineon

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