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IPB065N10N3G - MOSFET

IPB065N10N3G Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev.2.0 Final Power Man.
Features. N-channel, normal level. Excellent gate charge x RDS(on) product (FOM). Very low on-resistance RDS(on).

IPB065N10N3G Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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