IPB065N10N3G Datasheet - Infineon

IPB065N10N3G, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev.2.0 Final Power Man.
Features. N-channel, normal level. Excellent gate charge x RDS(on) product (FOM). Very low on-resistance RDS(on).

datasheet Preview Page 1 from Datasheet4u.com

IPB065N10N3G-Infineon.pdf

IPB065N10N3G Datasheet Preview — Preview of IPB065N10N3G PDF

Datasheet Details

Part number:

IPB065N10N3G

Manufacturer:

Infineon ↗

File Size:

1.12 MB

Description:

MOSFET

Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

IPB065N10N3G Distributors

📁 Related Datasheet

IPB065N10N3 IPB065N03LG IPB065N06LG IPB06CN10NG IPB06CNE8NG IPB06N03LA

📌 All Tags

IPB065N10N3G MOSFET Infineon

Infineon IPB065N10N3G-like datasheet