IPB068N20NM6 200V MOSFET

Infineon

Description

IPB068N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

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Datasheet Specifications

Part number: IPB068N20NM6
Manufacturer: Infineon ↗
File Size: 1.12 MB
Datasheet: IPB068N20NM6-Infineon.pdf
Description: 200V MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb-free lead plating; RoHS compli

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 6.8 mΩ ID 134 A Qoss 232 nC QG 73 nC Qrr 391 nC Type / Ordering Code IPB068N20NM6 Package PG-TO263-3 D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 068N20N6 Related Link

IPB068N20NM6 Distributors

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IPB068N20NM6 200V MOSFET Infineon

Infineon IPB068N20NM6-like datasheet