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IPB068N20NM6 - 200V MOSFET

IPB068N20NM6 Description

IPB068N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

IPB068N20NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb-free lead plating; RoHS compli

IPB068N20NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 6.8 mΩ ID 134 A Qoss 232 nC QG 73 nC Qrr 391 nC Type / Ordering Code IPB068N20NM6 Package PG-TO263-3 D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 068N20N6 Related Link

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200V MOSFET Infineon
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