IPB06N03LA
Infineon ↗ Technologies AG
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Optimos 2 power-transistor. and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology
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IPB06N03LAG - Power-Transistor
(Infineon Technologies)
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IPB06N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo.
IPB06N03LB - Power-Transistor
(Infineon Technologies)
..
IPB06N03LB
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for .
IPB065N03L - Power-Transistor
(Infineon)
Je]R
%&$ #b %
IPB065N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.
IPB065N03LG - Power-Transistor
(Infineon Technologies)
Je]R
%&$ #b %
IPB065N06LG - Power-Transistor
(Infineon Technologies)
..
IPB065N06L G
IPP065N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channe.
IPB065N10N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB065N10N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB065N10N3 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G
Data Sheet
Rev. 2.0 Final
Power Man.
IPB065N10N3G - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª3 Power-Transistor, 100 V IPB065N10N3 G
Data Sheet
Rev. 2.0 Final
Power Man.
IPB065N15N3G - Power Transistor
(Infineon)
IPB065N15N3 G
%&$ #™3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D ( & Q. 5BI G ? > B5C9.