Datasheet4U Logo Datasheet4U.com

IPB065N10N3 - N-Channel MOSFET

IPB065N10N3 Description

Isc N-Channel MOSFET Transistor IPB065N10N3 *.

IPB065N10N3 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB065N10N3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 73 320 PD Total Dissipation @TC=25℃ 150 Tch Max. Operating J

📥 Download Datasheet

Preview of IPB065N10N3 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IPB065N10N3
Manufacturer
INCHANGE
File Size
254.37 KB
Datasheet
IPB065N10N3-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

📌 All Tags

INCHANGE IPB065N10N3-like datasheet

IPB065N10N3 Stock/Price