IPDH4N03LAG Datasheet, Transistor, Infineon Technologies

IPDH4N03LAG Features

• Transistor
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R

PDF File Details

Part number:

IPDH4N03LAG

Manufacturer:

Infineon ↗ Technologies

File Size:

326.76kb

Download:

📄 Datasheet

Description:

Optimos 2 power - transistor.

IPDH4N03LAG Application

• Applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance

TAGS

IPDH4N03LAG

Infineon Technologies

📁 Related Datasheet

IPDH4N03LA - OPTIMOS 2 POWER - TRANSISTOR (Infineon Technologies)
IPDH4N03LA G IPSH4N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for targe.

IPDH5N03LA - OptiMOS2 Power-Transistor (Infineon Technologies)
IPDH5N03LA G IPSH5N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for targe.

IPDH5N03LAG - OptiMOS2 Power-Transistor (Infineon Technologies)
IPDH5N03LA G IPSH5N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for targe.

IPDH6N03LAG - Power-Transistor (Infineon Technologies)
.DataSheet.co.kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc conver.

IPD025N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem.

IPD025N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch.

IPD029N04NF2S - MOSFET (Infineon)
IPD029N04NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.

IPD031N03L - Power-Transistor (Infineon)
Kf^S %&$ #b % (>.;?6?@<> 7NJ\]ZN[ R 3 DEDH;E5: ;@ 9 ( * . / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC  5A@ G7CE7CD R, F3 >;8;76 3 .

IPD031N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.

IPD031N03LG - Power-Transistor (Infineon)
Kf^S %&$ #b % (>.;?6?@<> 7NJ\]ZN[ R 3 DEDH;E5: ;@ 9 ( * . / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC  5A@ G7CE7CD R, F3 >;8;76 3.