2ED2109S06F Datasheet, Driver, Infineon

2ED2109S06F Features

• Driver
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
• Negative VS transient immunity of 100 V
• Floating channel designed for bootstrap operation <

PDF File Details

Part number:

2ED2109S06F

Manufacturer:

Infineon ↗

File Size:

1.03MB

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📄 Datasheet

Description:

650v half bridge gate driver. The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced out

2ED2109S06F Application

• Applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as bel

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2ED2109S06F

Infineon

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