Datasheet4U.com

2ED2109S06F - 650V half bridge gate driver

Infineon

📥 Download Datasheet

2ED2109S06F Datasheet Preview — Preview of 2ED2109S06F PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2ED2109S06F
Manufacturer	Infineon ↗
File Size	1.28 MB
Description	650V half bridge gate driver
Datasheet	2ED2109S06F-Infineon.pdf

2ED2109S06F Product details

Description

The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lockout for both chann.

📁 2ED2109S06F Similar Datasheet

2ED020I12-F - Dual IGBT Driver (eupec GmbH)
2ED300C17 - Dual IGBT Driver (Eupec)
2EDL1S - Power Entry Module (Tyco)
2EDL1SC - Power Entry Module (Tyco)
2EDL1SCM - Power Entry Module (Tyco)
2EDL1SM - Power Entry Module (Tyco)
2EDL4 - Power Entry Module (Tyco)
2EDL4C - Power Entry Module (Tyco)

Other Datasheets by Infineon

2ED21091S06F - 650V half bridge gate driver
2ED21094S06J - 650V half bridge gate driver
2ED2104S06F - 650V half bridge gate driver
2ED21064S06J - 650V high-side and low-side gate driver
2ED2106S06F - 650V high-side and low-side gate driver
2ED21084S06J - 650V half bridge gate driver

Published: Apr 10, 2020 |