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2ED28073J06F half-bridge gate driver

2ED28073J06F Description

2ED28073J06F 2ED28073J06F 600 V half-bridge gate driver with integrated bootstrap diode .
The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

2ED28073J06F Features

* Product summary
* Negative VS transient immunity of 70 V, dV/dt immune
* Lower di/dt gate driver for better noise immunity
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 600 V
* Maximum bootstrap voltage (VB node) of + 625 V
* Inte

2ED28073J06F Applications

* VS_OFFSET = 600 V max IO+ pk / IO- pk(typ) = + 20 mA/ - 80 mA VCC = 10 V to 20 V Delay matching = 50 ns max. Deadtime (typ. ) = 300 ns tON / tOFF (typ. ) = 530 ns/ 530 ns Package 8-Lead DSO-8 Driving IGBTs, enhancement mode N-Channel MOSFETs in various motor control applications. Infineon recommenda

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half-bridge gate driver Infineon
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