BGA10H1MN9 High-band Low Noise Amplifier

Infineon

Description

BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI Control .
2 3 Absolute Maximum Ratings 3 4 DC Characteristics 4 5 RF Characteristics 4 6 MIPI RFFE Specification 7 7 Application Information 17 8 Pa.

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Datasheet Specifications

Part number: BGA10H1MN9
Manufacturer: Infineon ↗
File Size: 967.05 KB
Datasheet: BGA10H1MN9-Infineon.pdf
Description: High-band Low Noise Amplifier

Features

* Operating frequencies: 2.3 - 2.7 GHz
* Insertion power gain: 19.7 dB
* Low noise figure: 0.8 dB
* Low current consumption: 6.0 mA
* Support of 1.2 V and 1.8 V VDD/VIO
* Integrated DC block capacitors at input and output
* MIPI RFFE 3.0 1.1 x

Applications

* The BGA10H1MN9 is designed for 4G and 5G applications covering 3GPP Bands between 2.3 and 2.7 GHz (e. g. B7 and B41). As a result of high gain and an ultra-low Noise Figure performance of the LNA frontend losses can be compensated and the data rate can be significantly improved. The MIPI interface pr

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BGA10H1MN9 High-band Low Noise Amplifier Infineon

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