BGA10H1MN9 Datasheet - Infineon

High-band Low Noise Amplifier

BGA10H1MN9 Features

* Operating frequencies: 2.3 - 2.7 GHz

* Insertion power gain: 19.7 dB

* Low noise figure: 0.8 dB

* Low current consumption: 6.0 mA

* Support of 1.2 V and 1.8 V VDD/VIO

* Integrated DC block capacitors at input and output

* MIPI RFFE 3.0 1.1 x

BGA10H1MN9 General Description

2 3 Absolute Maximum Ratings 3 4 DC Characteristics 4 5 RF Characteristics 4 6 MIPI RFFE Specification 7 7 Application Information 17 8 Package Information 19 Disclaimer 25 Datasheet 1 Revision 2.0 2023-07-31 BGA10H1MN9 High-Band Low Noise Amplifier with Gain Steps and MIPI Contr.

BGA10H1MN9 Datasheet (967.05 KB)