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BGA2012 - 1900 MHz high linear low noise amplifier

BGA2012 Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Product specification Supersedes data of 2.
Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low vol.

BGA2012 Features

* Low current, low voltage
* High linearity
* High power gain
* Low noise
* Integrated temperature compensated biasing

BGA2012 Applications

* RF front end

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