DF120R12W2H3_B27 Datasheet - Infineon

DF120R12W2H3_B27 - IGBT

Technische Information / Technical Information IGBT-Modul IGBT-Module DF120R12W2H3_B27 Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften High Speed IGBT H3 Niedrige Schaltverluste Mechanische Eigenschaften 3 kV AC 1min Isolationsfestigkeit Al2O3 Substrat mit kleinem thermischen Widerstand Integrierter NTC Temperatur Sensor Kompaktes Design PressFIT Verbindungstechnik J VCES = 1200V IC nom = 40A / I.

DF120R12W2H3_B27 Features

* High speed IGBT H3

* Low switching losses Mechanical Features

* 3 kV AC 1min insulation

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

* Compact design

* PressFIT contact technology Module Label Code Barcod

DF120R12W2H3_B27-Infineon.pdf