Datasheet4U.com

IDW30E65D1 - Rapid Switching Emitter Controlled Diode

Infineon

📥 Download Datasheet

IDW30E65D1 Datasheet Preview — Preview of IDW30E65D1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: IDW30E65D1
Manufacturer: Infineon ↗
File Size: 1.60 MB
Datasheet: IDW30E65D1-Infineon.pdf
Description: Rapid Switching Emitter Controlled Diode

IDW30E65D1 Product details

Features

650 V Emitter Controlled technology.
Temperature stable behaviour of key parameters.
Low forward voltage (VF).
Ultra fast recovery.
Low reverse recovery charge (Qrr).
Low reverse recovery current (Irrm).
Softness factor >1.
175 °C junction operating temperature.
Pb-free lead plating; RoHS compliant.

📁 Related Datasheet

IDW30G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW100E60 - Fast Switching Emitter Controlled Diode (Infineon Technologies)
IDW10G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW12G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW16G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW20G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)
IDW40E65D1 - Diode (Infineon Technologies)
IDW40G65C5 - SiC Schottky Barrier diodes (Infineon Technologies)

📌 All Tags

Rapid Switching Emitter Controlled Diode Infineon

Infineon IDW30E65D1-like datasheet

IDW30E60 - Fast Switching Emitter Controlled Diode
IDW30C65D1 - Diode
IDW30C65D2 - Diode
IDW30G120C5B - Silicon Carbide Schottky Diode
IDW32G65C5B - Silicon Carbide Diode
IDW10G120C5B - Silicon Carbide Schottky Diode

IDW30E65D1 Stock/Price