IDW32G65C5B Datasheet - Infineon

IDW32G65C5B, Silicon Carbide Diode

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW32G65C5B Final Datasheet Rev.2.0, 2015-04-13 Power Management & Multimar.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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Datasheet Details

Part number:

IDW32G65C5B

Manufacturer:

Infineon ↗

File Size:

723.57 KB

Description:

Silicon Carbide Diode

Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

Applications

* Breakdown voltage tested at 35 mA2) 3)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Highe

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