IDW32G65C5B - Silicon Carbide Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved the
IDW32G65C5B Features
* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to
