IMSQ120R012M2HH 1200V SiC MOSFET

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Description

IMSQ120R012M2HH CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT te.
13-16 (5-8). case 1(2) and drain D1(D2). 3,4 (11,12). source S1(S2). 2(10). kelvin sense K1(K2).

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Datasheet Specifications

Part number: IMSQ120R012M2HH
Manufacturer: Infineon ↗
File Size: 1.31 MB
Datasheet: IMSQ120R012M2HH-Infineon.pdf
Description: 1200V SiC MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 89 A at TC = 100°C
* RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
* Internal layout optimized for fast switching
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand ti

Applications

* General purpose drives (GPD)
* EV Charging
* Online UPS / Industrial UPS
* String inverter
* Servo drives Product validation

IMSQ120R012M2HH Distributors

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IMSQ120R012M2HH 1200V SiC MOSFET Infineon

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