IMSQ120R012M2HH - 1200V SiC MOSFET
* 13-16 (5-8) * case 1(2) and drain D1(D2) * 3,4 (11,12) * source S1(S2) * 2(10) * kelvin sense K1(K2) * 1(9) * gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restr
IMSQ120R012M2HH Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 89 A at TC = 100°C
* RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
* Internal layout optimized for fast switching
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand ti
