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IMSQ120R012M2HH Datasheet - Infineon

IMSQ120R012M2HH 1200V SiC MOSFET

* 13-16 (5-8) * case 1(2) and drain D1(D2) * 3,4 (11,12) * source S1(S2) * 2(10) * kelvin sense K1(K2) * 1(9) * gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restr.

IMSQ120R012M2HH Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 89 A at TC = 100°C

* RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C

* Internal layout optimized for fast switching

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand ti

IMSQ120R012M2HH-Infineon.pdf

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Datasheet Details

Part number:

IMSQ120R012M2HH

Manufacturer:

Infineon ↗

File Size:

1.31 MB

Description:

1200v sic mosfet.

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IMSQ120R012M2HH IMSQ120R012M2HH 1200V SiC MOSFET Infineon

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