IMW65R107M1H Datasheet, Mosfet, Infineon

IMW65R107M1H Features

• Mosfet
• Optimized switching behavior at higher currents
• Commutation robust fast body diode with low Qrr
• Superior gate oxide reliability
• Best thermal cond

PDF File Details

Part number:

IMW65R107M1H

Manufacturer:

Infineon ↗

File Size:

1.42MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IMW65R107M1H Application

• Applications
• SMPS
• UPS (uninterruptable power supplies)
• Solar PV inverters
• EV charging infrastructure

TAGS

IMW65R107M1H

Infineon

📁 Related Datasheet

IMW65R007M2H - MOSFET (Infineon)
IMW65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW65R015M2H - MOSFET (Infineon)
IMW65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW65R020M2H - MOSFET (Infineon)
IMW65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW65R027M1H - MOSFET (Infineon)
IMW65R027M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.

IMW65R039M1H - MOSFET (Infineon)
Public IMW65R039M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.

IMW65R040M2H - MOSFET (Infineon)
IMW65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW65R050M2H - MOSFET (Infineon)
IMW65R050M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.

IMW120R007M1H - MOSFET (Infineon)
IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.

IMW120R020M1H - MOSFET (Infineon)
IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • ID.

IMW120R030M1H - MOSFET (Infineon)
IMW120R030M1H IMW120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c.