* VDSS = 1200 V at Tvj = 25°C
* IDDC = 20 A at TC = 100°C
* RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage, VGS
IMZA120R078M2H Datasheet (1.45 MB)
IMZA120R078M2H
1.45 MB
1200v sic mosfet.
IMZA120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo.
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