Description
1
drain 2
source 3
Kelvin sense contact 4
gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction
Copyright © Infineon Techn
Type IMZA120R078M2H
Package PG-TO247-4-U02
Marking 12M2H078
Datasheet www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00 2025-03-25
IMZA120R078M2H
CoolSiC™ 1200 V SiC MOSFET G2
Table of contents
Table of contents
D
Features
- VDSS = 1200 V at Tvj = 25°C.
- IDDC = 20 A at TC = 100°C.
- RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C.
- Very low switching losses.
- Overload operation up to Tvj = 200°C.
- Short circuit withstand time 2 µs.
- Benchmark gate threshold voltage, VGS(th) = 4.2 V.
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
- Robust body diode for hard commutation.
- . XT interconnection technology for best-in-.
IMZA120R078M2H-Infineon.pdf
