IMZA120R030M1H Datasheet - Infineon

IMZA120R030M1H, 1200V SiC Trench MOSFET

IMZA120R030M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection .
1. drain 2. source 3. Kelvin sense contact 4. gate Note: the source and sense pins are not exchangeable, their exc.

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Datasheet Details

Part number:

IMZA120R030M1H

Manufacturer:

Infineon ↗

File Size:

1.34 MB

Description:

1200V SiC Trench MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 70 A at TC = 25°C
* RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic

Applications

* General purpose drives (GPD)
* EV Charging
* Online UPS/Industrial UPS
* String inverter
* Solar power optimizer 2021-10-27 restricted Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Des

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