IMZA120R020M1H Datasheet (Infineon)

IMZA120R020M1H, 1200V SiC MOSFET

1 * Drain 2 * Source 3 * Kelvin sense contact 4 * Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R020M1H Package PG-TO247-4-U02 Marking 12M1H020

IMZA120R020M1H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 98 A at TC = 25°C

* RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Short circuit withstand time 3 µs

* Benchmark gate threshold voltage, VGS(th) = 4.2 V

* Robust against parasitic