IMZA120R020M1H - 1200V SiC MOSFET

Infineon

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Datasheet Details

Part number: IMZA120R020M1H
Manufacturer: Infineon ↗
File Size: 1.40 MB
Datasheet: IMZA120R020M1H-Infineon.pdf
Description: 1200V SiC MOSFET

IMZA120R020M1H Product details

Description

1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R020M1H Package PG-TO247-4-U02 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2024-11-15 IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOS

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 98 A at TC = 25°C.
RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Short circuit withstand time 3 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance TO-247-4.
4P.

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1200V SiC MOSFET Infineon

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