IMZA120R020M1H 1200V SiC MOSFET

Infineon

Description

IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection .
1. Drain 2. Source 3. Kelvin sense contact 4. Gate Note: the source and sense pins are not exchangeable, their exc.

📥 Download Datasheet

IMZA120R020M1H Datasheet Preview — Preview of IMZA120R020M1H PDF

Datasheet Specifications

Part number: IMZA120R020M1H
Manufacturer: Infineon ↗
File Size: 1.40 MB
Datasheet: IMZA120R020M1H-Infineon.pdf
Description: 1200V SiC MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 98 A at TC = 25°C
* RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Short circuit withstand time 3 µs
* Benchmark gate threshold voltage, VGS(th) = 4.2 V
* Robust against parasitic

Applications

* General purpose drives (GPD)
* EV Charging
* Online UPS/Industrial UPS
* String inverter
* Solar power optimizer 2021-10-27 restricted Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Des

IMZA120R020M1H Distributors

📁 Related Datasheet

IMZ1A IMZ2A IMZ4 IMZ88

📌 All Tags

IMZA120R020M1H 1200V SiC MOSFET Infineon

Infineon IMZA120R020M1H-like datasheet