IMZA120R014M1H - 1200V SiC Trench MOSFET

Infineon

📥 Download Datasheet

IMZA120R014M1H Datasheet Preview — Preview of IMZA120R014M1H PDF

Datasheet Details

Part number: IMZA120R014M1H
Manufacturer: Infineon ↗
File Size: 1.40 MB
Datasheet: IMZA120R014M1H-Infineon.pdf
Description: 1200V SiC Trench MOSFET

IMZA120R014M1H Product details

Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R014M1H Package PG-TO247-4-U02 Marking 12M1H014 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.40 2024-11-15 IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOS

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 127 A at TC = 25°C.
RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Short circuit withstand time 3 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance TO-247-4.
4.

📁 Related Datasheet

IMZ1A - General purpose transistor (Rohm)
IMZ2A - Dual Transistor (Rohm)
IMZ4 - General purpose transistor (Rohm)
IMZ88 - GENERAL PURPOSE DUAL TRANSISTOR (UTC)

📌 All Tags

1200V SiC Trench MOSFET Infineon

Infineon IMZA120R014M1H-like datasheet

IMZA120R017M2H - 1200V SiC MOSFET
IMZA120R020M1H - 1200V SiC MOSFET
IMZA120R022M2H - 1200V SiC MOSFET
IMZA120R026M2H - 1200V SiC MOSFET
IMZA120R030M1H - 1200V SiC Trench MOSFET
IMZA120R034M2H - 1200V SiC MOSFET

IMZA120R014M1H Stock/Price