IMZA120R026M2H Datasheet - Infineon

1200V SiC MOSFET

IMZA120R026M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 49 A at TC = 100°C

* RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage, VGS

IMZA120R026M2H General Description

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R026M2H Package PG-TO247-4-U02 Marking 12M2H026 Datasheet www.infineon.com.

IMZA120R026M2H Datasheet (1.45 MB)

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Datasheet Details

Part number:

IMZA120R026M2H

Manufacturer:

Infineon ↗

File Size:

1.45 MB

Description:

1200v sic mosfet.
IMZA120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo.

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IMZA120R026M2H 1200V SiC MOSFET Infineon

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IMZA120R026M2H Features

IMZA120R026M2H General Description

Datasheet Details

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Description:

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