IMZA120R026M2H - 1200V SiC MOSFET

Infineon

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Datasheet Details

Part number: IMZA120R026M2H
Manufacturer: Infineon ↗
File Size: 1.45 MB
Datasheet: IMZA120R026M2H-Infineon.pdf
Description: 1200V SiC MOSFET

IMZA120R026M2H Product details

Description

1. drain 2. source 3. Kelvin sense contact 4. gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R026M2H Package PG-TO247-4-U02 Marking 12M2H026 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-25 IMZA120R026M2H CoolSiC™ 1200 V SiC MOS.

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 49 A at TC = 100°C.
RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-.

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1200V SiC MOSFET Infineon

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