IPB027N10N5 MOSFET

Infineon

Description

IPB027N10N5 MOSFET OptiMOSª 5 Power-Transistor, 100 V .

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Datasheet Specifications

Part number: IPB027N10N5
Manufacturer: Infineon ↗
File Size: 0.98 MB
Datasheet: IPB027N10N5-Infineon.pdf
Description: MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J

Applications

* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 2.7 mΩ ID 166 A Qoss 142 nC QG(0V. .10V) 112 nC D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type / Ordering Code IPB027N10N5 Package PG-TO 263-3 M

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IPB027N10N5 MOSFET Infineon

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