IPB133N12NM6 MOSFET

Infineon

Description

Public IPB133N12NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 120 V .
1 Maxi.

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Datasheet Specifications

Part number: IPB133N12NM6
Manufacturer: Infineon ↗
File Size: 721.42 KB
Datasheet: IPB133N12NM6-Infineon.pdf
Description: MOSFET

Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 13.3 mΩ ID 55 A Qoss 36 nC QG 15 nC Qrr (1000 A/μs) 180 nC Type/Ordering Code IPB133N12NM6 Package PG‑TO263‑3 D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 133N12N6 R

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IPB133N12NM6 MOSFET Infineon

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