IPD122N10N3G, Infineon
IPD122N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPD12CN10N, Infineon
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) .
IPD12CN10NG, Infineon
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) .
IPD12CNE8NG, Infineon Technologies
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IPB12CNE8N G IPI12CNE8N G
IPD12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent g.
