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IPD33CN10NG Power-Transistor

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Description

IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

IPD33CN10NG Distributors

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📌 All Tags

IPD33CN10NG Power-Transistor Infineon
Infineon IPD33CN10NG-like datasheet
IPD33CN10N
IPD30N03S2L-07
IPD30N03S2L-10
IPD30N03S2L-20
IPD30N03S4L-09