Datasheet Details
- Part number
- IPS110N12N3G
- Manufacturer
- Infineon ↗
- File Size
- 573.47 KB
- Datasheet
- IPS110N12N3G-Infineon.pdf
- Description
- MOSFET
IPS110N12N3G Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev.2.
IPS110N12N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo
IPS110N12N3G Applications
* or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lif
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