IPS110N12N3G MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev.2.

📥 Download Datasheet

IPS110N12N3G Datasheet Preview — Preview of IPS110N12N3G PDF

Datasheet Specifications

Part number: IPS110N12N3G
Manufacturer: Infineon ↗
File Size: 573.47 KB
Datasheet: IPS110N12N3G-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

Applications

* or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lif

IPS110N12N3G Distributors

📁 Related Datasheet

IPS110N12N3 IPS101 IPS1011 IPS1011PBF IPS1011R IPS1011RPBF

📌 All Tags

IPS110N12N3G MOSFET Infineon

Infineon IPS110N12N3G-like datasheet